恭喜马静怡硕士获得2022年TEL-FUDAN论文奖学金

发布者：胡焱发布时间：2022-12-07浏览次数：215

马静怡 2019级硕士研究生


获奖论文 

Top gate engineering of field-effect transistors based on wafer-scale two-dimensional semiconductors

Top gate engineering of field-effect transistors based on wafer-scale two-dimensional semiconductors.pdf